Manipulation of the graphene surface potential by ion irradiation

We show that the work function of exfoliated single layer graphene can be modified by irradiation with swift (E_{kin}=92 MeV) heavy ions under glancing angles of incidence. Upon ion impact individual surface tracks are created in graphene on SiC. Due to the very localized energy deposition characteristic for ions in this energy range, the surface area which is structurally altered is limited to ~ 0.01 mum^2 per track. Kelvin probe force microscopy reveals that those surface tracks consist of electronically modified material and that a few tracks suffice to shift the surface potential of the whole single layer flake by ~ 400 meV. Thus, the irradiation turns the initially n-doped graphene into p-doped graphene with a hole density of 8.5 x 10^{12} holes/cm^2. This doping effect persists even after heating the irradiated samples to 500{\deg}C. Therefore, this charge transfer is not due to adsorbates but must instead be attributed to implanted atoms. The method presented here opens up a new way to efficiently manipulate the charge carrier concentration of graphene.Comment: 6 pages, 4 figure

Photon number states generated from a continuous-wave light source

Conditional preparation of photon number states from a continuous-wave nondegenerate optical parametric oscillator is investigated. We derive the phase space Wigner function for the output state conditioned on photo detection events that are not necessarily simultaneous, and we maximize its overlap with the desired photon number state by choosing the optimal temporal output state mode function. We present a detailed numerical analysis for the case of two-photon state generation from a parametric oscillator driven with an arbitrary intensity below threshold, and in the low intensity limit, we present a formalism that yields the optimal output state mode function and fidelity for higher photon number states.Comment: 8 pages, 7 figures, v2: shortened versio

Magnetic structures of Mn3-xFexSn2: an experimental and theoretical study

We investigate the magnetic structure of Mn3-xFexSn2 using neutron powder diffraction experiments and electronic structure calculations. These alloys crystallize in the orthorhombic Ni3Sn2 type of structure (Pnma) and comprise two inequivalent sites for the transition metal atoms (4c and 8d) and two Sn sites (4c and 4c). The neutron data show that the substituting Fe atoms predominantly occupy the 4c transition metal site and carry a lower magnetic moment than Mn atoms. Four kinds of magnetic structures are encountered as a function of temperature and composition: two simple ferromagnetic structures (with the magnetic moments pointing along the b or c axis) and two canted ferromagnetic arrangements (with the ferromagnetic component pointing along the b or c axis). Electronic structure calculations results agree well with the low-temperature experimental magnetic moments and canting angles throughout the series. Comparisons between collinear and non-collinear computations show that the canted state is stabilized by a band mechanism through the opening of a hybridization gap. Synchrotron powder diffraction experiments on Mn3Sn2 reveal a weak monoclinic distortion at low temperature (90.08 deg at 175 K). This lowering of symmetry could explain the stabilization of the c-axis canted ferromagnetic structure, which mixes two orthorhombic magnetic space groups, a circumstance that would otherwise require unusually large high-order terms in the spin Hamiltonian.Comment: 11 pages, 13 figure

Detecting swift heavy ion irradiation effects with graphene

In this paper we show how single layer graphene can be utilized to study swift heavy ion (SHI) modifications on various substrates. The samples were prepared by mechanical exfoliation of bulk graphite onto SrTiO$_3$, NaCl and Si(111), respectively. SHI irradiations were performed under glancing angles of incidence and the samples were analysed by means of atomic force microscopy in ambient conditions. We show that graphene can be used to check whether the irradiation was successful or not, to determine the nominal ion fluence and to locally mark SHI impacts. In case of samples prepared in situ, graphene is shown to be able to catch material which would otherwise escape from the surface.Comment: 10 pages, 3 figure

Damage in graphene due to electronic excitation induced by highly charged ions

Graphene is expected to be rather insensitive to ionizing particle radiation. We demonstrate that single layers of exfoliated graphene sustain significant damage from irradiation with slow highly charged ions. We have investigated the ion induced changes of graphene after irradiation with highly charged ions of different charge states (q = 28-42) and kinetic energies E_kin = 150-450 keV. Atomic force microscopy images reveal that the ion induced defects are not topographic in nature but are related to a significant change in friction. To create these defects, a minimum charge state is needed. In addition to this threshold behaviour, the required minimum charge state as well as the defect diameter show a strong dependency on the kinetic energy of the projectiles. From the linear dependency of the defect diameter on the projectile velocity we infer that electronic excitations triggered by the incoming ion in the above-surface phase play a dominant role for this unexpected defect creation in graphene

Conditional generation of sub-Poissonian light from two-mode squeezed vacuum via balanced homodyne detection on idler mode

A simple scheme for conditional generation of nonclassical light with sub-Poissonian photon-number statistics is proposed. The method utilizes entanglement of signal and idler modes in two-mode squeezed vacuum state generated in optical parametric amplifier. A quadrature component of the idler mode is measured in balanced homodyne detector and only those experimental runs where the absolute value of the measured quadrature is higher than certain threshold are accepted. If the threshold is large enough then the conditional output state of signal mode exhibits reduction of photon-number fluctuations below the coherent-state level.Comment: 7 pages, 6 figures, REVTe

A Press for Electric Resistivity Measurements of Powders

In research work on semiconductors, the electric resistivity measurements are very important. In most cases it is impossible to obtain a compact sample and the measurements have to be done on the powdered material. For this purpose the resistivity is measured on a sample which is obtained by pressing the powder to a definite pressure between two electrodes

Zamke za nositelje naboja u stupnjevanim InGaAS fotodiodama s velikim sadržajem indija

Carrier traps in In0.82Ga0.18As, introduced during manufacturing of photodiodes by vapour phase epitaxy (VPE), have been studied by electrical measurements. Two groups of localized energy levels associated with traps were found in photodiodes annealed at higher temperature after fabrication: the first, at Ec- 0.14 eV, and the second located deeper, close to the middle of the energy gap. Electrically activated dislocations by association with some impurities are responsible for the occurrence of the deeper levels.Električnim mjerenjima istražena su svojstva zamki za nositelje naboja koje nastaju pri izradi fotodioda iz In0.82Ga0.18As metodom epitaksijalnog rasta iz parne faze (VPE). U fotodiodama, koje su naknadno napuštane nakon izrade na povišenoj temperaturi, zapažene su dvije skupine lokaliziranih nivoa zamki: jedan plići na Ec − 0, 14 eV i druge dublje nešto ispod sredine zabranjenog energijskog pojasa. Ustanovljeno je da su električki aktivirane dislokacije primjesama odgovorne za pojavu dubljih nivoa

A Press for Electric Resistivity Measurements of Powders

In research work on semiconductors, the electric resistivity measurements are very important. In most cases it is impossible to obtain a compact sample and the measurements have to be done on the powdered material. For this purpose the resistivity is measured on a sample which is obtained by pressing the powder to a definite pressure between two electrodes